Method of manufacturing memory structure

ABSTRACT

A method of manufacturing a memory structure is provided. The method includes forming a first gate structure, a second gate structure, and a plurality of source/drain regions in a substrate, in which the plurality of source/drain regions are disposed on opposite sides of the first gate structure and the second gate structures; performing a dry etching process to form a trench between the first gate structure and the second gate structure; performing a wet etching process to expand the trench, in which the expanded trench has a hexagonal shaped cross section profile; and forming a bit line contact in the expanded trench.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a Divisional Application of the U.S.application Ser. No. 17/451,157, filed Oct. 18, 2021.

BACKGROUND Field of Invention

The present invention relates to a method of manufacturing a memorystructure. More particularly, the present invention relates to a methodof manufacturing a memory structure having a polygonal cross sectionprofile.

Description of Related Art

A dynamic random access memory (DRAM) cell structure typically includesa transistor device and a capacitor. The transistor and the capacitorform a series connection with each other. Using a word line and a bitline, a DRAM cell structure can be read and programmed.

To satisfy the demand for ever-greater amounts of memory storage, thedimensions of the DRAM memory cells have been continuously reduced, andas a result, the packing densities of the DRAMs have increasedconsiderably. As the dimensions of the transistors and capacitors havebecome smaller, there is a continuous need to improve the structure andthe manufacturing process of memory devices.

SUMMARY

In accordance with an aspect of the present disclosure, a method ofmanufacturing a memory structure is provided. The method includesforming a first gate structure, a second gate structure, and a pluralityof source/drain regions in a substrate, in which the plurality ofsource/drain regions are disposed on opposite sides of the first gatestructure and the second gate structures; performing a dry etchingprocess to form a trench between the first gate structure and the secondgate structure; performing a wet etching process to expand the trench,in which the expanded trench has a hexagonal shaped cross sectionprofile; and forming a bit line contact in the expanded trench.

According to some embodiments of the present disclosure, the wet etchingprocess is performed with a tetramethyl ammonium hydroxide (TMAH) basedsolution.

According to some embodiments of the present disclosure, the wet etchingprocess laterally and vertically expands the trench.

According to some embodiments of the present disclosure, the expandedtrench has two tips laterally protruded toward the first gate structureand the second gate structure respectively.

According to some embodiments of the present disclosure, the bit linecontact has a first tilt sidewall and a second tilt sidewall, and anangle between the first tilt sidewall and the second tilt sidewall isabout 104-114 degrees.

According to some embodiments of the present disclosure, the bit linecontact has a top width and a bottom width, and the top width is greaterthan the bottom width.

According to some embodiments of the present disclosure, the bit linecontact includes phosphorous, arsenic, or carbon doped polysilicon.

According to some embodiments of the present disclosure, the dry etchingprocess is performed with a halogen-based gas.

According to some embodiments of the present disclosure, forming the bitline contact in the expanded trench includes forming a conductivematerial in the expanded trench; and etching back the conductivematerial.

According to some embodiments of the present disclosure, the methodfurther includes performing an implantation process.

According to some embodiments of the present disclosure, the methodfurther includes forming a bit line on the bit line contact.

According to some embodiments of the present disclosure, the methodfurther includes forming a capacitor electrically connecting to one ofthe source/drain regions.

In accordance with another aspect of the present disclosure, a memorystructure is provided. The memory structure includes a first gatestructure, a second gate structure, and a first source/drain regiondisposed in a substrate, in which the first source/drain region isdisposed between the first gate structure and the second gatestructures. The memory substrate further includes a bit line contactdisposed on the first source/drain region, in which the bit line contacthas a hexagonal shaped cross section profile.

According to some embodiments of the present disclosure, the bit linecontact has two tips laterally protruded toward the first gate structureand the second gate structure respectively.

According to some embodiments of the present disclosure, the bit linecontact has a first tilt sidewall and a second tilt sidewall, and anangle between the first tilt sidewall and the second tilt sidewall isabout 104-114 degrees.

According to some embodiments of the present disclosure, the bit linecontact has a top width and a bottom width, and the top width is greaterthan the bottom width.

According to some embodiments of the present disclosure, the bit linecontact includes phosphor, arsenic, or carbon doped polysilicon.

According to some embodiments of the present disclosure, the bit linecontact has a convex top surface.

According to some embodiments of the present disclosure, the memorystructure further includes a bit line disposed on the bit line contact.

According to some embodiments of the present disclosure, the memorystructure further includes a plurality of second source/drain regionsand a plurality of capacitors. The first source/drain region and thesecond source/drain region are disposed on opposite sides of the firstgate structure and the second gate structure respectively. Thecapacitors are electrically connected to the second source/drainregions.

It is to be understood that both the foregoing general description andthe following detailed description are by examples, and are intended toprovide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flow chart illustrating a method of manufacturing a memorystructure in accordance with some embodiments of this disclosure.

FIG. 2 to FIG. 4 are cross-sectional views of various intermediarystages in the manufacturing of memory structure in accordance with someembodiments of this disclosure.

FIG. 5A is a cross-sectional view of various intermediary stages in themanufacturing of memory structure in accordance with some embodiments ofthis disclosure. FIG. 5B is an enlarged diagram of an expanded trench inFIG. 5A.

FIG. 6A is a cross-sectional view of various intermediary stages in themanufacturing of memory structure in accordance with some embodiments ofthis disclosure. FIG. 6B is an enlarged diagram of a bit line contact inFIG. 6A.

FIG. 7 to FIG. 8 are cross-sectional views of various intermediarystages in the manufacturing of memory structure in accordance with someembodiments of this disclosure.

DETAILED DESCRIPTION

In order to make the description of the present disclosure more detailedand complete, the following illustratively describes implementationaspects and specific embodiments of the present disclosure; however,this is not the only form in which the specific embodiments of thepresent disclosure are implemented or utilized. The embodimentsdisclosed below may be combined with or substituted by each other in anadvantageous manner, and other embodiments may be added to an embodimentwithout further recording or description. In the following description,numerous specific details will be described in detail to enable readersto fully understand the following embodiments. However, the embodimentsof the present disclosure may be practiced without these specificdetails.

Specific embodiments of the components and arrangements described beloware intended to simplify the present disclosure. Of course, these aremerely embodiments and are not intended to limit the present disclosure.For example, forming a first feature above or on a second feature in thesubsequent description may include an embodiment in which the firstfeature and the second feature are formed as in direct contact, orinclude an embodiment in which an additional feature is formed betweenthe first feature and the second feature such that the first feature andthe second feature are not in direct contact. Additionally, componentsymbols and/or letters may be repeated in various embodiments of thepresent disclosure. This repetition is for the purpose of simplicity andclarity, and does not in itself indicate the relationship between thevarious embodiments and/or configurations discussed.

Furthermore, spatial relative terms, such as “below”, “under”, “above”,“over”, etc., are intended to facilitate description of the relativerelationship between a component or feature and another component orfeature, as shown in the drawings. The true meaning of these spatialrelative terms includes other orientations. For example, when theillustration is flipped up and down by 180 degrees, the relationshipbetween a component and another component may change from “below” or“under” to “above” or “over”. Furthermore, the spatial relativenarratives used herein should be interpreted the same.

FIG. 1 is a flow chart illustrating a method of manufacturing a memorystructure in accordance with some embodiments of this disclosure. Asshown in FIG. 1 , the method 100 includes operation 102, operation 104,operation 106, and operation 108. The method for manufacturing thememory structure 10 will be further described according to one or moreembodiments below. FIGS. 2-8 are cross-sectional views at various stagesof method 100 according to some embodiments of the present disclosure.

Reference is made to FIG. 1 and FIG. 2 . In the operation 102 of themethod 100, gate structures 210 and source/drain (S/D) regions 220 a,220 b are formed in a substrate 200. In some embodiments, the substrate200 includes silicon (Si), silicon-germanium (SiGe), silicon carbide(SiC), gallium (Ga), gallium nitride (GaN), gallium arsenide (GaAs),epitaxy layer, combinations thereof, or the like.

Each of the gate structures 210 may include a gate electrode 214 and agate dielectric layer 212 disposed between the gate electrode 214 andthe substrate 200. An isolation structure 216 may be formed on each ofthe gate electrodes 214. In some embodiments, the gate structure 210 maybe a buried gate structure. In some embodiments, the buried gatestructure can serve as a buried word line (BWL) for a DRAM device. Thesource/drain regions 220 a, 220 b are disposed on opposite sides of thegate structures 210. In some embodiments, the source/drain regions 220a, 220 b include an n-type doped region. As shown in FIG. 2 , two gatestructures 210 may share one S/D region 220 a disposed between thereof.One gate structure 210 and source/drain region 220 a and 220 bconstitute a transistor. A shallow trench isolation (STI) structure 202is formed in the substrate 200 for defining at least one active region.

Referring to FIG. 1 , in the operation 104 of the method 100, a dryetching process is performed to form a trench between the gatestructures. FIG. 3 and FIG. 4 illustrate the detail steps ofimplementing operation 104 in accordance with some embodiments of thepresent disclosure.

Reference is made to FIG. 3 . A patterned mask layer 218 is formed onthe gate structures 210 and the S/D regions 220 a, 220 b. In someembodiments, the patterned mask layer 218 may be a single-layeredstructure or a multi layered structure. The patterned mask layer 218exposes a portion of the substrate 200 (e.g. the S/D region 220 a)between the gate structures 210.

Reference is made to FIG. 4 . The exposed substrate 200 between the gatestructures 210 is then removed by the dry etching process. In someembodiments, the dry etching process is performed with a halogen-basedgas. For example, HBr, Cl-containing, F-containing gas, or the like maybe used to etch the substrate 200. As such, the trench T1 is formed inthe substrate 200 and between the gate structures 210. In someembodiments, the trench T1 has a width W1 of about 54-66 nm. In someembodiments, the trench T1 has a depth D1 of about 36-44 nm. Forexample, the width W1 and the depth D1 of the trench T1 may be about 60nm and about 40 nm, respectively. As shown in FIG. 4 , the trench T1 hasa vertical sidewall. That is, the trench T1 may have substantially equalwidth W1 from its bottom to top. In some embodiments, a cleaning processcan follow the dry etching process to remove residues of the etchingsubstances and/or undesired substances formed during the dry etchingprocess. For example, dilute HF may be used in the cleaning process.

Reference is made to FIG. 1 and FIGS. 5A-5B. In the operation 106 of themethod 100, a wet etching process is performed to expand the trench T1(shown in FIG. 4 ). After the dry etching process, the wet etchingprocess laterally and vertically etches the substrate 200 to expand thetrench T1. In some embodiments, the wet etching process is performedwith a tetramethyl ammonium hydroxide (TMAH) based solution. In someexamples, TMAH solution is used to etch the trench T1. A concentrationof TMAH in the TMAH solution may be of about 2.35%, and a concentrationof water may be 97.65%. The wet etching process may be performed at atemperature of about 25° C. for 170 seconds.

The structural detail of the expanded trench T1′ is shown in FIG. 5B anddescribed as follow. FIG. 5B is an enlarged diagram illustrating theexpanded trench T1′ in FIG. 5A. It is noted that some elements adjacentto the expanded trench T1′ are not shown in FIG. 5B for clarity. In someembodiments, the expanded trench T1′ has a polygonal shaped crosssection profile. For example, the expanded trench T1′ may have ahexagonal cross section profile. The expanded trench T1′ has two tipslaterally protruded toward the adjacent gate structures 210respectively. The tips are constituted by a first tilt sidewall S1 and asecond tilt sidewall S2. In some embodiments, an angle θ1 between thefirst tilt sidewall S1 and a reference line A-A′ (the dashed lineconnecting the tips) is from about 52.7 to about 56.7 degrees, and anangle θ2 between the second tilt sidewall S2 and the reference line A-A′is from about 52.7 to about 56.7 degrees. In some embodiments, the angleθ1 is substantially equal to the angle θ2. For example, the angle θ1 andthe angle θ2 may be 54.7 degrees, respectively. The angle θ1 and theangle θ2 may be related to the etching rate of the different crystalorientations.

In some embodiments, the expanded trench T1′ has a top width W1′ greaterthan a bottom width W2. In some embodiments, a middle width W3 isgreater than the top width W1′ and the bottom width W2. In someembodiments, the top width W1′ is substantially equal to the width W1 ofthe trench T1 shown in FIG. 4 , and the middle width W3 is greater thanthe width W1. In some embodiments, the top width W1′ is of about 54-66nm, the bottom width W2 is of about 28-36 nm, and the middle width W3 isof about 79-100 nm. In some embodiments, the expanded trench T1′ has adepth D2 of about 54-66 nm. The expanded trench T1′ has a lower portion(i.e., from a bottom surface of the expanded trench T1′ to the referenceline A-A′) and an upper portion (i.e., from a top surface of thesubstrate 200 to the reference line A-A′). A depth of the lower portionis greater than that of the upper portion. In some examples, the topwidth W1′ may be 60 nm, the bottom width W2 may be 32 nm, and the middlewidth W3 may be 88 nm. The upper portion of the expanded trench T1′ mayhave a depth of about 20 nm, and the lower portion of the expandedtrench T1′ may have a depth of about 40 nm. The dimension of theexpanded trench T1′ is formed according to the demand of the subsequentformed bit line contact.

In some embodiments, a cleaning process can follow the wet etchingprocess to remove residues of the etching substances and/or undesiredsubstances formed during the dry etching process. For example, DI watermay be used in the wet cleaning process.

In some embodiments, an implantation process may be further performed tothe substrate 200. For example, phosphorous (P) ions, or the like areimplanted into the substrate 200 exposed by the expanded trench T1′ fordecreasing the electrical resistance.

Reference is made to FIG. 1 and FIGS. 6A-6B. In the operation 108 of themethod 100, a bit line contact 230 is formed in the expanded trench T1′.In some embodiments, forming the bit line contact 230 in the trench T1includes forming a conductive material (not shown) in the expandedtrench T1′ and then etching back the conductive material. In someembodiments, the bit line contact 230 includes phosphorous (P), arsenic(As), or carbon doped polysilicon. Specifically, the doped polysiliconcan decrease the resistance of the bit line contact. Further,phosphorous has a smaller lattice constant than silicon, resulting in atensile stress to increase the electron mobility of the NMOS.

The structural detail of the bit line contact 230 is shown in FIG. 6Band described as follow. FIG. 6B is an enlarged diagram illustrating thebit line contact 230 shown in FIG. 6A. It is noted that some elementsadjacent to the bit line contact 230 is omitted for clarity. As shown inFIG. 6B, the bit line contact 230 may inherit the structure of theexpanded trench T1′ shown in FIG. 5B. That is, the bit line contact 230has a polygonal shaped cross section profile. For example, the bit linecontact 230 also has two tips laterally protruded toward the adjacentisolation structures 216. In some embodiments, the bit line contact 230has a first tilt sidewall S1′ and a second tilt sidewall S2′, and anangle between the first tilt sidewall S1′ and the second tilt sidewallS2′ is about 104-114 degrees. Specifically, an angle θ1′ between thefirst tilt sidewall S1′ and a reference line A-A′ (the dashed lineconnecting the tips) is from about 52.7 to about 56.7 degrees, and anangle θ2′ between the second tilt sidewall S2′ and the reference lineA-A′ is from about 52.7 to about 56.7 degrees. In some embodiments, theangle θ1′ is substantially equal to the angle θ2′. In some examples, theangle θ1′ and the angle θ2′ may be 54.7 degrees, respectively.

In some embodiments, the bit line contact 230 has a top width W1″ and abottom width W2′ greater than the top width W1″, and a middle width W3′is greater than the top width W1″ and the bottom width W2′. In someembodiments, the dimensions of the bit line contact may substantiallyequal to that of the expanded trench T1′ shown in FIG. 5B. In someembodiments, the bit line contact 230 may have a substantially convextop surface. In other embodiments, the top surface of the bit linecontact 230 may substantially level with the substrate 200 and theisolation structures 216.

Reference is made to FIG. 7 . The method further includes forming a bitline 232 on the bit line contact 230. In some embodiments, the bit line232 includes conductive material. In some embodiments, in the formationof the bit line 232, a portion of the bit line contact 230 (e.g., theconvex top surface) may be removed. The bit line 232 is electricallyconnected to the source/drain region 220 a through the bit line contact230.

Reference is made to FIG. 8 . The method further includes forming aplurality of capacitors 270 electrically connecting to the source/drainregion 220 b. Specifically, an interlayer dielectric (ILD) layer 240 isformed over the bit line 232. A plurality of contact plugs 242 areembedded in the ILD layer 240 and electrically connected to thesource/drain regions 220 b. A plurality of conductive pads 250 arefurther formed on the contact plugs 242. A dielectric layer 260 and thecapacitors 270 are further formed on the conductive pads 250. In someembodiments, the capacitor 270 includes a bottom electrode 272, a topelectrode 276, and an isolation layer 274 disposed between thereof. Assuch, the capacitor 270 is electrically connected to the source/drainregions 220 b through the conductive pads 250 and the contact plugs 242.

Another aspect of the present disclosure is to provide a memorystructure 10. As shown in FIG. 8 , the memory structure 10 includes gatestructures 210, source/drain regions 220 a, 220 b, and a bit linecontact 230 embedded in the substrate 200. The source/drain regions 220a, 220 b are disposed between the gate structures 210. The bit linecontact 230 is disposed on the source/drain region 220 a and has apolygonal shaped cross section profile. In some embodiments, the bitline contact 230 has two tips laterally protruded toward the adjacentgate structures 210 respectively. In some embodiments, the bit linecontact 230 includes phosphorous, arsenic, or carbon doped polysilicon.A bit line 232 is further disposed on the bit line contact 230. Each ofthe capacitor 270s is electrically connected to one source/drain region220 b through corresponding contact plug 242 and conductive pad 250. Insome embodiment, the memory structure 10 may be DRAM, but the presentdisclosure is not limited thereto.

As described above, according to the embodiments of the presentdisclosure, a memory structure and a method of manufacturing thereof areprovided. In the memory structure of the present disclosure, the bitline contact has a polygonal cross section profile. The bit line contactis formed by a dry etching process, followed by a wet etching and adeposition process. In specific, the wet etching process results in thepolygonal shaped bit line contact. This profile increases the volume ofthe bit line contact and decrease electrical resistance. Further, thebit line contact includes doped polysilicon, such as phosphorous dopedpolysilicon, which can boost electron mobility of a NMOS. Therefore, theperformance of the memory structure is enhanced.

Although the present invention has been described in considerable detailwith reference to certain embodiments thereof, other embodiments arepossible. Therefore, the spirit and scope of the appended claims shouldnot be limited to the description of the embodiments contained herein.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims.

What is claimed is:
 1. A method of manufacturing a memory structure,comprising: forming a first gate structure, a second gate structure, anda plurality of source/drain regions in a substrate, wherein theplurality of source/drain regions are disposed on opposite sides of thefirst gate structure and the second gate structures; performing a dryetching process to form a trench between the first gate structure andthe second gate structure; performing a wet etching process to expandthe trench to form an expanded trench, wherein the expanded trench has ahexagonal shaped cross section; and forming a bit line contact in theexpanded trench.
 2. The method of claim 1, wherein the wet etchingprocess is performed with a tetramethyl ammonium hydroxide (TMAH) basedsolution.
 3. The method of claim 1, wherein the wet etching processlaterally and vertically expands the trench.
 4. The method of claim 1,wherein the expanded trench has two tips laterally protruded toward thefirst gate structure and the second gate structure respectively.
 5. Themethod of claim 1, wherein the bit line contact has a first tiltsidewall and a second tilt sidewall, and an angle between the first tiltsidewall and the second tilt sidewall is about 104-114 degrees.
 6. Themethod of claim 5, wherein the bit line contact has a top width and abottom width, and the top width is greater than the bottom width.
 7. Themethod of claim 1, wherein the bit line contact comprises phosphorous,arsenic, or carbon doped polysilicon.
 8. The method of claim 1, whereinthe dry etching process is performed with a halogen-based gas.
 9. Themethod of claim 1, wherein forming the bit line contact in the expandedtrench comprises: forming a conductive material in the expanded trench;and etching back the conductive material.
 10. The method of claim 1,further comprising performing an implantation process.
 11. The method ofclaim 1, further comprising forming a bit line on the bit line contact.12. The method of claim 1, further comprising forming a capacitorelectrically connecting to one of the source/drain regions.